Interface effects on tunneling magnetoresistance in organic spintronics with flexible amine–Au links
نویسندگان
چکیده
منابع مشابه
Effects of resonant interface states on tunneling magnetoresistance
Based on model and ab initio calculations we discuss the effect of resonant interface states on the conductance of epitaxial tunnel junctions. In particular we show that the ‘‘hot spots’’ found by several groups in ab initio calculations of symmetrical barriers of the ki-resolved conductance can be explained by the formation of bonding and antibonding hybrids between the interface states on bot...
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Rigorous theory of the tunneling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches 65% in the tunneling regime but can be as high as 280% in the metallic regime when the va...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2013
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/24/41/415201